Typical Electrical Characteristics (continued)
7
30
S(O
LIM
1m
6
5
V DS = 5.0V
T J = -55°C
25°C
125°C
10
5
3
RD
N)
IT
100
s
us
4
1
10m
s
3
2
0.3
0.1
V GS = 4.5V
SINGLE PULSE
10
1s
DC
0m
s
1
0.03
R θ JA =See Note1b
T A = 25°C
0
0
2
4
6
8
10
0.01
0.1
0.2
0.5
1
2
5
10
20 30
50
I D , DRAIN CURRENT (A)
Figure 13. Transconductance Variation with Drain
Current and Temperature .
V , DRAI N-SOURCE VOLTAGE (V)
DS
Figure 14. Maximum Safe Operating Area .
1
0.8
0.6
0.4
1b
1a
2
1.8
1.6
1a
T A = 25 C
0.2
4.5"x5" FR-4 Board
1.4
1b
4.5"x5" FR-4 Board
o
Still Air
T A = 25 C
Still Air
o
V GS = 4.5V
0
0
0.1
0.2
0.3
0.4
1.2
0
0.1
0.2
0.3
0.4
2oz COPPER MOUNTING PAD AREA (in )
2
Figue 15. SuperSOT TM _ 3 Maximum
Steady-State Power Dissipation versus Copper
Mounting Pad Area.
1
2oz COPPER MOUNTING PAD AREA (in 2 )
Figure 16. Maximum Steady-State Drain
Current versus Copper Mounting Pad Area .
0.5
D = 0.5
0.2
0.1
0.05
0.2
0.1
0.05
R θ JA (t) = r(t) * R θ JA
R θ JA = See Note 1b
P(pk)
0.02
0.01
0.02
0.01
t 1
t 2
0.005
Single Pulse
T J - T A = P * R θ JA (t)
Duty Cycle, D = t 1 /t 2
0.002
0.001
0.0001
0.001
0.01
0.1
1
10
100
300
t 1 , TIME (sec)
Figure 17. Transient Thermal Response Curve.
Note : Characterization performed using the conditions described in note 1b. Transient thermal response will
change depending on the circuit board design.
NDS355AN Rev.C
相关PDF资料
NDS355N MOSFET N-CH 30V 1.6A SSOT3
NDS7002A MOSFET N-CH 60V 280MA SOT-23
NDS8425 MOSFET N-CH 20V 7.4A 8SOIC
NDS8434 MOSFET P-CH 20V 6.5A 8-SOIC
NDS8947 MOSFET 2P-CH 30V 4A 8-SOIC
NDS9400A MOSFET P-CH 30V 3.4A 8-SOIC
NDS9407 MOSFET P-CH 60V 3A 8-SOIC
NDS9945 MOSFET 2N-CH 60V 3.5A 8-SOIC
相关代理商/技术参数
NDS355AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
NDS355AN 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET 30V 1.7A ((NW)) 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, 30V, 1.7A, SUPER SOT-3
NDS355AN_G 制造商:Fairchild Semiconductor Corporation 功能描述:N-Channel 30 V 0.085 Ohm Logic Level Enhance Mode Field Effect Transistor-SSOT-3
NDS355AN_Q 功能描述:MOSFET N-Channel Logic RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS355AN-CUT TAPE 制造商:FAIRCHILD 功能描述:N-Channel 30 V 0.085 Ohm Logic Level Enhance Mode Field Effect Transistor-SSOT-3
NDS355N 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS355N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
NDS355N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET